switch chip

In the second and final article, the issue of adding optical input-output (I/O) to ICs is discussed with a focus on the work of the Imec nanoelectronics R&D centre that is using silicon photonics for optical I/O.

Part 2: Optical I/O

Imec has demonstrated a compact low-power silicon-photonics transceiver operating at 40 gigabits per second (Gbps). The silicon photonics transceiver design also uses 14nm FinFET CMOS technology to implement the accompanying driver and receiver electronics. 

Joris Van Campenhout“We wanted to develop an optical I/O technology that can interface to advanced CMOS technology,” says Joris Van Campenhout, director of the optical I/O R&D programme at Imec. “We want to directly stick our photonics device to that mainstream CMOS technology being used for advanced computing applications.”

Traditionally, the Belgium nanoelectronics R&D centre has focussed on scaling logic and memory but in 2010 it started an optical I/O research programme. “It was driven by the fact that we saw that electrical I/O doesn’t scale that well,” says Van Campenhout. Electrical interfaces have power, space and reach issues that get worse with each hike in transmission speed.

Imec is working with partner companies to research optical I/O. The players are not named but include semiconductor foundries, tool vendors, fabless chip companies and electronic design automation tools firms. The aim is to increase link capacity, bandwidth density - a measure of the link capacity that can be crammed in a given space - and reach using optical I/O. The research’s target is to achieve between a 10x to 100x in scaling.

The number of silicon photonics optical I/O circuits manufactured each year remains small, says Imec, several thousand to ten thousand semiconductor wafers at most. But Imec expects volumes to grow dramatically over the next five years as optical interconnects are used for ever shorter reaches, a few meters and eventually below one meter. 

“That is why we are participating in this research, to put together building blocks to help in the technology pathfinding,” says Van Campenhout. 

 

We wanted to develop an optical I/O technology that can interface to advanced CMOS technology

 

Silicon photonics transceiver 

Imec has demonstrated a 1330nm optical transceiver operating at 40Gbps using non-return-to-zero signalling. The design uses hybrid integration to combine silicon photonics with 14nm FinFET CMOS electronics. The resulting transceiver occupies 0.025 mm2, the area across the combined silicon photonics and CMOS stack for a single transceiver channel. This equates to a bandwidth density of 1.6 terabit-per-second/mm2. 

The silicon photonics and FinFET test chips each contain circuitry for eight transmit and eight receive channels. Combined, the transmitter path comprises a silicon photonics ring modulator and a FinFET differential driver while the receiver uses a germanium-based photo-detector and a first-stage FinFET trans-impedance amplifier (TIA).

The transceiver has an on-chip power consumption of 230 femtojoules-per-bit, although Van Campenhout stresses that this is a subset of the functionality needed for the complete link. “This number doesn’t include the off-chip laser power,” he says. “We still need to couple 13dBm - 20mW - of optical power in the silicon photonics chip to close the link budget.” Given the laser has an efficiency of 10 to 20 percent, that means another 100mW to 200mW of power.  

That said, an equivalent speed electrical interface has an on-chip power consumption of some 2 picojoules-per-bit so the optical interface still has some margin to better the power efficiency of the equivalent electrical I/O. In turn, the optical I/O’s reach using single-mode fibre is several hundred meters, far greater than any electrical interface.

Imec is confident it can increase the optical interface’s speed to 56Gbps. The layout of the CMOS circuits can be improved to reduce internal parasitic capacitances while Imec has already improved the ring modulator design compared to the one used for the demonstrator. 

“We believe that with a few design tweaks we can get to 56Gbps comfortably,” says Van Campenhout. “After that, to go faster will require new technology like PAM-4 rather than non-return-to-zero signalling.”

Imec has also tested four transmit channels using cascaded ring modulators on a common waveguide as part of work to add a wavelength-division multiplexing capability.

 

Transceiver packaging

The two devices - the silicon photonics die and the associated electronics - are combined using chip-stacking technology. 

Both devices use micro-bumps with a 50-micron pitch with the FinFET die flip-chipped onto the silicon photonics die. The combined CMOS and silicon photonics assembly is glued on a test board and wire-bonded, while the v-groove fibre arrays are attached using active alignment. The fibre-to-chip coupling loss, at 4.5dB in the demonstration, remains high but the researchers say this can be reduced, having achieved 2dB coupling losses in separate test chips. 

 

Source: Imec.

Imec is also investigating using through-silicon vias (TSV) technology and a silicon photonics interposer in order to replace the wire-bonding. TSVs deliver better power and ground signals to the two dies and enable high-speed electrical I/O between the transceiver and the ASIC such as a switch chip. The optics and ASIC could be co-packaged or the transceiver used in an on-board optics design next to the chip. 

“We have already shown the co-integration of TSVs with our own silicon photonics platform but we are not yet showing the integration with the CMOS die,” says Van Campenhout. “Something we are working on.”  

 

Co-packaging the optics with silicon will come at a premium cost

 

Applications

The first ICs to adopt optical I/O will be used in the data centre and for high-performance computing. The latest data centre switch ICs, with a capacity of 12.8 terabits, are implemented using 16nm CMOS. Moving to a 7nm CMOS process node will enable capacities of 51.2 terabits. “These are the systems where the bandwidth density challenge is the largest,” says Van Campenhout.

But significant challenges must be overcome before this happens, he says: “I think we all agree that bringing optics deeply integrated into such a product is not a trivial thing.” 

Co-packaging the optics with silicon will come at a premium cost. There are also reliability issues to be resolved and greater standardisation across the industry will be needed as to how the packaging should be done. 

Van Campenhout expects this will only happen in the next four to five years, once the traffic-handling capacity of switch chips doubles and doubles again.  

Imec has seen growing industry interest in optical I/O in the last two years. “We have a lot of active interactions so interest is accelerating now,” says Van Campenhout.